Gourab Majumdar (b. 1955) received Bachelor of Technology degree in electrical engineering from Indian Institute of Technology (IIT), Delhi, India in 1977 and Doctor of Engineering degree from Kyshuu Institute of Technology (KIT), Fukuoka, Japan in 2005. He lived in Japan since September, 1978 and started his career in the country at Mitsubishi Electric Corporation on a special OJT program. He was employed by the company in 1980 and, since 1983, has worked in its units responsible for advanced power semiconductor development, design and applications. Since 2012, he has been acting as Executive Fellow,  Semiconductor & Device Group of Mitsubishi Electric Corporation. He has published and co-authored many technical papers and books on power devices and holds several patents in the related fields. He is a receipient of the prestigious National Invention Award in Japan in 2005 for invention of the IPM (Intelligent Power Module) fundamental concept and has also received a number of other prestigious awards, including the “Monotsukuri Nihon Taishou” (Japan Craftmanship Grand-prix) award from the honorary Minister of  Economy, Trade and Industry in 2013 for contribution in development and commercialization of various generations of IPM devices. He served as the General Chairman of ISPSD 2013 and has been participating as a member of both PCIM’s Advisory Board and ISPSD’s Advisory Committee.

Components 

SiC power diodes are seen today after 15 years of commercial availability as an established component in high end applications targeting to best efficiency or highest power density. The worldwide sales increased continuously, in several applications like server PFC or booster stages in solar inverters they are meanwhile an integral part of new designs. Majority
of the products are still discrete 650V devices, complemented by 1200V parts in discrete packages, but also a growing part of SiC diodes in power modules. The presentation will sketch the current technological benchmark for diodes and give an outlook in future potentials Transistors are commercially available since 2012, the core area here are 1200V based switches in various forms like MOSFETs, Bipolar transistors (BJT) or JFETs. Those new devices offer significant system advantages, but they also need more design efforts in order to use the features in a beneficial way. The variety of solutions seems to be confusing in the beginning for a large number of users, discussions about immaturities are frequently observed and thus, more efforts need to be spend in order to increase the attractiveness of SiC switches.
Interesting will be the outlook towards very high voltage components based on SiC. Demonstrations are numerous, the potential clearly visible. Future work will show whether the components can bring added value at system level and how the single chip solutions can be positioned vs. series connected devices resp. multilevel topologies.

Dr. Engel: Currently working as senior consultant at CeraCap Technology & Innovation Consulting, in Leibnitz, Austria.
Academic education 1978 - 1985 in physics and technical sciences at the Graz University of Technology, Austria.
Professional career until 1990 as a research-group team leader, AVL Graz - Austria, main interest in piezoelectric crystals.
Until 2013, working as a director of multilayer ceramic technology development at Siemens - Matsushita, later Epcos, then TDK, in Deutschlandsberg - Austria, since 2013 working as an independent consultant in the fields of capacitors, ceramic multilayer, passive electronic components, mainly for applications in power electronics.

Prof. Dr. Regine Mallwitz studied electrical engineering and received the Dipl.-Ing. degree at the “Otto-von-Guericke” University Magdeburg in 1994. After working on pulse power problems in gas and solid lasers at LAMBDA PHYSIK GmbH (today: Coherent) Goettingen and LISA Laser Products OHG Lindau, Germany, she received the PhD degree in 1999 at the University of Kassel. 1999 she entered the company eupec GmbH Warstein (today: Infineon) as R&D engineer and was responsible for the development of 1700V IGBT module family until 2004. From 2005 to 2013 she was with SMA Solar Technology AG. In 2013 she was appointed professor for Renewable Energies and Electromobility at University of Applied Sciences Fulda responsible. Since 2014 she is professor of Power Electronics at TU Braunschweig. Her special scientific interests are the application of fast switching power semiconductors and their integration of power electronic devices for instance photovoltaic inverters.

• He studied electronics and telecommunication engineering at the University in Graz and received his diploma in 1988
• He works as a group manager technology in the R&D of AT&S and was deeply involved in the most recent developments for HDI PCB
• Since 1997 his focus area is component embedding in PCB staring with printed passive components
• In 2008 he guided the FP7 project Hermes to success which resulted in the industrialization  of the chip embedding technology und later to the foundation of the business unit Advanced Packaging in AT&S
• He is author and co-author in 21 filed patent families for PCB and advanced packaging

Reinhold Bayerer studied physics at the Technical University of Darmstadt, Germany and completed in 1979. He continued at this University as Research Associate and achieved his doctor’s degree in physics in 1985.
He works in the field of IGBT Modules since then. A first paper on early IGBT-modules was given at PCI, Munich, 1987. He contributed to the fields of packaging technology, low inductance module design, test and application engineering, driver electronics, as well as manufacturing engineering. Several publications and patents may serve as a reference. Today, he is Fellow for physics of power modules and working at Infineon Technologies in Warstein, Germany.