D. Boroyevich, Virginia Tech Center for Power Electronics Systems, Blacksburg, US
G. Busatto, DAEIMI-Università degli Studi di Cassino, IT
J. Choi, Chungbuk National University, KR
R. De Doncker, RWTH Aachen, Aachen, DE
E. J. Dede, University of Valencia, ES
B. Ferreira, Delft University of Technology, NL
A. Hamidi, ABB Schweiz AG, Baden-Dättwil, CH
R. Herzer, Semikron Elektronik GmbH & Co. KG, Nürnberg, DE
M. Johnson, University of Nottingham, GB
S. Jones, Semelab Ltd, Lutterworth Leicstershire, GB
W. Koczara, Warsaw University of Technology, PL
J. W. Kolar, Eidgenössische Technische Hochschule Zürich, CH
L. Lorenz, Infineon Technologies China Co. Ltd., Shanghai, CN
G.-M. Martin, Valeo, Creteil Cedex, FR
M. Mermet-Guyennet, ALSTOM Transport, Semeac, FR
G. Miller, Infineon Technologies AG, München
C. O'Mathuna, Tyndall National Institute, Cork, IE
H. Ohashi, A.I.S.T., Tsukuba, JP
I. Omura, Kyushu Institute, Katakyushu, JP
M. Reimark, TranSiC AB, Kista, SE
J.-L. Schanen, G2ELab, St. Martin d'HERES cedex, FR
E. Scrofani, STMicroelectronics, Catania, IT
H. D. Silber, Universität Bremen, DE
T. Stockmeier, SEMIKRON Elektronik GmbH & Co. KG, Nürnberg, DE
J. Daan van Wyk, University of Johannesburg, ZA
E. Wolfgang, München, DE
M. Dehong Xu, Zhejiang University, Hangzhou, CN
S. Zudrell-Koch, TridonicAtco Lighting, Dornbirn, AT