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EMLC 2010 

Call for Papers 

Abstract Information

Abstract quality will be the basis for selection of conference presentations. The abstracts will be assessed for:

  • Originality of work
  • Specific results reported
  • Potential impact and interest to the attendees.

Therefore, we highly recommend that your abstract contains enough detail to clearly describe the content of your presentation. The abstracts should include at least one full page of text (minimum of 1000 words), the use of figures is encouraged.

Commercial papers, papers with no new research / development content, and papers where significant information is missing will not be accepted. All accepted abstracts will be printed, bound and handed out to the participants of the conference.

Please send your abstract as a MS-Word file to the Conference Chair, Dr. Uwe Behringer uwe.behringer.ubc@t-online.de, and to the Program Chairs, Dr. Wilhelm Maurer, wilhelm.maurer@infineon.com and Jacques Waelpoel, Jacques.waelpoel@asml.com

Deadline for Abstracts: September 28, 2009

By submitting an abstract you agree to

  • Present your work in person at the conference
  • Submit a manuscript in time

Authors will be notified of the acceptance of their submissions by October 1, 2009; further manuscript format and layout instructions will be provided at that time.

 

Manuscripts

Please, send the original of the manuscript a.s.a.p., latest by January 5, 2010

All manuscripts will be subject to a critical peer review before they are accepted as VDE publication. The VDE/GMM is in contact with SPIE for an additional publication in the SPIE Digital Library.

Please note: Late submissions may not be published.

 

Conference Topics

Presentations are solicited for the following and related topics:

Mask Manufacturing:

  • Mask Data Preparation
  • Pattern Generation: Writing, Etch, etc.
  • Photomask Processes & Materials
  • Metrology Tools & Technologies
  • Defect Inspection & Repair
  • Cleaning & Haze
  • Pellicles & Mask Boxes
  • Mask Process Yield & Cycle Time
  • Photomasks for RET & OPC; PSM
  • Masks for NGL: E-Beam, EUV, NIL, etc.

Mask Business:

  • Mask Business and Management
  • Mask Cost and Mask Development Strategy
  • Future Mask Demand

Lithography and Mask Application:

  • Double Patterning
  • RET, OPC, PSM, MEEF
  • Resist
  • Mask Defect Printability
  • Optical Materials
  • Immersion Lithography
  • Immersion Defectivity
  • Alternate Immersion Fluids
  • Lithography Process Control
  • Lithography Simulation

Emerging Mask and Lithography Technologies:

  • EUV Materials, Tools & Processes
  • EUV Mask Infastructure
  • NIL
  • Direct Write / Maskless Technologies

Mask and Lithography Equipment

 Cooperating Partner

Cea leti
Grenoble
Aepi Grenoble Isere

 Sponsoring Societies

Semiconductor Equipment and Materials International
SPIE
 
 
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