Schedule of the Presentations
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Tuesday, January 18th, 2011
08:30 Welcome and Introduction
U. Behringer, UBC Microelectronics, Ammerbuch, Germany, Conference Chair
08:45 Invited Welcome Speaker
D. Hilbert, Mayor of Economic Affairs of the City of Dresden
Session 1 - Plenary Session I
Session Chairs:
R. Seltmann, Globalfoundries, Dresden, Germany; J. Waelpoel, ASML, Veldhoven, The Netherlands
09:15 Keynote 1:
The Photomask Technology Roadmap: Hydra or Hyperbole? (invited)
C. Progler, Photronics Inc., Brookfield, USA
09:55 Keynote 2:
The Metamorphosis of a Mask Shop – How Foundry Requirements Change Mask Making (invited)
T. Schmidt, AMTC, Dresden, Germany
10:35 Coffee Break
Session 2 - Plenary Session II
Session Chairs:
C. Gale, Applied Materials, Dresden, Germany N. Hayashi, Dai Nippon Printing, Saitama Japan
11:05 Keynote 3:
Advanced Lithography: More than Rayleigh (invited)
B. Koek, ASML, Veldhoven, The Netherlands
11:45 Mask Industry Assessment Trend Analysis: 2011(invited)
D. Chan, G. Hughes, SEMATECH, Albany, NY, USA
12:15 Lunch Break
Session 3 - E-Beam Patterning
Session Chairs:
I. Stolberg, Vistec Electro Beam, Jena, Gernany; H. Wolf, Photronics MZD, Dresden, Germany
13:20 Best Paper of PMJ 2010 (invited)
Evaluation of a Next Generation EB Mask Writer for hp 32nm Lithography
K. Kono, R. Yamamoto, N. Nishida, Hoya Corporation, Tokyo, Japan; T. Komagata, T. Hasegawa, K. Goto, Y. Nakagawa, Jeol Ltd., Tokyo, Japan
13:50 Best Poster of BACUS 2010 (invited) Mask Process Correction (MPC) Modeling and its Application to EUV Mask for Electron Beam Mask Writer, EBM-7000
T. Kamikubo, T. Ohnishi, S. Hara, H. Anze, Y. Hattori, S. Tamamushi, NuFlare Technology, Yokohama, Japan; S. Bai, J.-S. Wang, R. Howell, G. Chen, J. Li, J. Tao, J. Wiley, Brion Technologies, Inc., Santa Clara, CA, USA; T. Kurosawa, Y. Saito, T. Takigawa, Brion Technologies KK (Japan), Tokyo, Japan
14:20 Multiresolution Mask Writing
E. Sahouria, Mentor Graphics Corp., San José, CA, USA
14:40 MSB for ILT Masks
J. Gramss, U. Weidenmüller, A. Stöckel, R. Jaritz, H.-J. Döring, M. Böttcher, Vistec Electron Beam GmbH, Jena, Germany
15:00 Coffee Break
Session 4 - NGL Lithography and Masks
Session Chairs:
H. Scheer, University of Wuppertal, Germany;
K.-D. Röth, KLA-Tencor MIE, Weilburg, Germany
15:30 NGL Masks: Development Status and Issue
(invited)
N. Hayashi, Dai Nippon Printing Co. Ltd., Saitama, Japan
16:00 Thermal Nanoimprint (T-NIL) with Photoresists for Hybrid Lithography
K. Dhima, C. Steinberg, S. Möllenbeck, A. Mayer, H.-C. Scheer, University of Wuppertal, Germany
Session 5 - Wafer Patterning & Application
Session Chairs:
R. Seltmann, Globalfoundries, Dresden, Germany; U. Behringer, UBC Microelectronics, Ammerbuch, Germany
16:20 Multilayer Reticles: Advantages and Challenges for 28nm Chip Making
A. Hotzel, R. Seltmann, J. Busch, E. Cotte, Globalfoundries, Dresden, Germany
16:40 Alignment Technology for Backside Integration Technique
J. Bauer (a), P. Kulse (a), U. Haak (a), G. Old (b), G. Scheuring (c), St. Döbereiner (c), F. Hillmann (c), H.-J. Brück (c), M. Kaynak (a), K.-E. Ehwald (a), St. Marschmeyer (a), M. Birkholz (a), K. Schulz (a)
(a) Institut für Halbleiterphysik (IHP) GmbH, Frankfurt/Oder, Germany
(b) Nikon Precision Europe GmbH, Langen,Germany
(c) MueTec GmbH, München, Germany
Session 6 - EUV Mask 1
Session Chairs:
Ch. Progler, Photronics, Photronics, S. Wurm, SEMATECH, Albany, NY, USA
17:00 Using Synchrotron Light to Accelerate EUV
Resist and Mask Materials Learning (invited)
P. P. Naulleau, Lawrence Berkeley National Laboratory, Berkeley CA, USA
17:30 EUV Mask Readiness and Challenges for 22nm Half Pitch and Beyond
D. Chan, SEMATECH, Albany, NY, USA
17:50 Actinic EUV-Mask Metrology: Tools, Concepts, Components
R. Lebert, A. Fahrazadi, W. Diete, Bruker Advanced Supercon GmbH, Bergisch- Gladbach, Germany; S. Herbert, A. Maryasov, L. Juschkin, RWTH Aachen University and JARA, Aachen, Germany; D. Schäfer, Ch. Phiesel, T. Wilhein, University of Applied Sciences Koblenz, Remagen, Germany; D. Esser, M. Hoefer, D. Hoffmann, Fraunhofer Institute for Laser Technology (ILT), Aachen, Germany
18:10 EUV Actinic Mask Blank Defect Inspection:
Results and Status of Concept Realization
A. Maryasov, S. Herbert, L. Juschkin, RWTH Aachen University and JARA, Aachen, Germany; R. Lebert, Bruker Advanced Supercon GmbH, Bergisch-Gladbach, Germany; K. Bergmann, Fraunhofer Institute for Laser Technology, Aachen, Germany
19:30 Banquet Dinner: Meet for Busses at the Hilton Lobby
Wednesday, January 19th, 2011
Session 7 – Metrology
Session Chairs:
T. Scherübl, Carl Zeiss, SMS, Jena, Germany J. Whittey, KLA-Tencor, Oakdale, CA, USA
08:30 The Evolution of Pattern Placement Metrology for Mask Making (invited)
D. Beyer, N. Rosenkranz, C. Blaesing-Bangert, Carl Zeiss SMS GmbH, Jena, Germany
09:00 Correlation Method Based Mask to Mask Overlay Metrology for 32nm Node and beyond
D. Seidel (a), M. Arnz (b), D. Beyer (a)
(a) Carl Zeiss SMS GmbH, Jena, Germany;
(b) Carl Zeiss SMT AG, Oberkochen, Germany
09:20 Update on Next Generation Metrology Tool for DPL Reticles
K.-D. Röth, J. Bender, F. Laske, D. Adam, K.-H. Schmidt, KLA-Tencor MIE GmbH, Weilburg, Germany
09:40 First Steps towards Traceability in Scatterometry
F. Scholze (a), B. Bodermann (b), H. Groß (a), A. Kato (a), M. Wurm (b)
(a) Physikalisch-Technische Bundesanstalt, Berlin, Germany
(b) Physikalisch-Technische Bundesanstalt, Braunschweig, Germany
10:00 YieldStar: a New Metrology Platform for Advanced Lithography Control
J. Maas, M. Ebert, K. Bhattacharyya, H. Cramer, A. Becht, S. Keij, R. Plug, A. Fuchs, M. Kubis, H. Megens, ASML, Veldhoven, The Netherlands
10:20 Coffee Break
Session 8 - Mask Application
Session Chairs:
J. Finders, ASML, Veldhoven, The Netherlands J. Waelpoel, ASML, Veldhoven, The Netherlands
10:50 Mask 3D Effects: Impact on Imaging and Placement (invited)
J. Finders, T. Hollink, ASML, The Netherlands B.V., Veldhoven, The Netherlands
11:30 Use of Scatterometry for Scanner Matching
H. Bald, R. Seltmann, K. Bubke, Globalfoundries, Dresden, Germany; M. Ruhm, M. Noot, D. Woischke, P. van Adrichem, P. Luehrmann, ASML, Veldhoven, The Netherlands
11:50 Mask Tuning for Process Window Improvement
U. Buttgereit (a), R. Birkner (a), E. Graitzer (b), A. Cohen (b), B. Triulzi (c), C. Romeo (c)
(a)
Carl Zeiss SMS GmbH, Jena, Germany
(b)
Carl Zeiss SMS, Karmiel, Israel
(c)
Numonyx Italy S.r.l., Agrate Brianza (MI), Italy
12:10 Model-based Scanner Tuning for Process Optimization
R. Aldana, V. Velanki, W. Shao, R. Goosens, Z. Yu, X. Xie, Y. Cao, BRION Technologies, Santa Clara CA, United States; K. Schreel, ASML Netherlands B.V., Veldhoven, The Netherlands
12:30 Augmented Reality for Wafer Prober
P. Gilgenkrantz, STMicroelectronics, Crolles, France
12:50 Lunch
Session 9 – Mask Cleaning & Haze
Session Chair:
J. Jonckheere, IMEC, Leuven, Belgium W. Schmidt, AMTC, Dresden, Germany
13:50 Effective EUVL Mask Cleaning Technology Solutions for Mask Manufacturing and in-fab Maintenance
U. Dietze(a), P. Dress(a), T. Waehler (a), S. Singh(b), R. Jonckheere (c)
(a) HamaTech APE, Sternenfels, Germany
(b) Suss MicroTec Inc., Waterbury Center, VT, USA;
(c) IMEC, Leuven, Belgium
14:10 Investigation on full 6” Masks Using Innovative Solutions for direct Physico- Chemical Analyses of Mask Contamination and Haze
L. Dussault (a), B. Pelissier (a), F. Dufaye (b),
S. Gough (b), O. Chaix (c), P. Sergent (d), M. Tissier (d)
(a) CEA-LETI, Grenoble, France
(b) STMicroelectronics, Crolles, France
(c) Grenoble INP, Grenoble, France
(d) Toppan Photomasks Corbeil, Corbeil
Essonnes, France
14:30 Comparison of Cleaning Processes with Respect to Cleaning Efficiency
P. Nesladek (a), S. Osborne (b), T. Rode (a)
(a) Advanced Mask Technology Center, Dresden, Germany
(b) Beam Services, Inc.,Pleasanton, CA, USA
14:50 Minienvironment Solutions: Special Concepts for Mask-Systems
M, Dobler, M. Rüb, T. Billen, MCRT GmbH, Heuchelheim, Germany
Session 10 - Data Prep / RET & Simulation
Session Chairs:
W. Maurer, Infineon Technologies AG, Munich, Germany; M. Arnz, Carl Zeiss, SMT, Oberkochen, Germany
15:10 DOE Experiment for Scatterbar Optimization at the 90nm Node
G. Bouton (a), B. Connolly (b), D. Courboin (c),
A. Di Giacomo (a), F. Gasnier (a), R. Lallement (a),
D. Parker (a), M. Pindo (c), J.C. Richoilley (c),
F. Royere (c), A. Rameau-Savio (d), M. Tissier (c)
(a)ST Microelectronics, Rousset, France
(b)Toppan Photomasks Germany, Dresden
(c)Toppan Photomasks France, Corbeil-Essonnes
(d) Elsys Design, Aix-en-Provence, France
15:30 Geometrically Induced Dose Correction - Method and Performance Results
R. Galler (a), K.- Choi (b), M. Gutsch (b), C. Hohle (b), M. Krüger (a), D. Melzer (a), L. Ramos (c), M. Sülzle (a), U. Weidenmüller (c)
(a) Equicon Software GmbH Jena, Germany
(b) Fraunhofer Center Nanoelectronic Technologies, Dresden, Germany
(c) Vistec Electron Beam GmbH, Jena, Germany
15:50 Line End Shortening and Application of Novel Correction Algorithms in E-Beam Direct Write
M. Freitag, M. Gutsch, K.-H. Choi, C. Hohle, Fraunhofer Center Nanoelectronic Technologies, Dresden, Germany
16:10 Coffee Break
Session 11 – EUV Mask II
Session Chairs:
D. Chan, SEMATECH, Albany, NY, USA U. Behringer, UBC Microelectronics, Ammerbuch, Germany
16:30 Concept and Feasibility of Aerial Imaging Measurements on EUV Masks
S. Perlitz (a), W. Harnisch (a), U. Strößner (a), H. Feldmann (b), D. Hellweg (b)
(a) Carl Zeiss SMS GmbH, Jena, Germany
(b) Carl Zeiss SMT AG, Oberkochen, Germany
16:50 Current Status of EUV Mask Inspection Using 193nm Optical Inspection System in 30nm Node and beyond
S. H. Han (a), J. H. Na (a), W. I. Cho (a), D. H. Chung (a),
C. U. Jeon (a), H. K. Cho (a), L. Shoval (b),
D. Bernstein (b), E. Y. Park (b), A. Sreenath (b),
S. Mangan (b)
(a) Samsung Electronics, Co., Ltd., Hwasung-City, Gyeonggi-Do, Korea
(b) Applied Materials®, Rehovot, Israel
17:10 Evidence of Printing Blank-Related Defects on EUV Masks Missed by Blank Inspection
R. Jonckheere, D. Van Den Heuvel, E. Hendrickx, K. Ronse, IMEC vzw, Leuven, Belgium
17:30 Imaging Performance Improvements by EUV Mask Stack Optimization
E. van Setten (a), N. Davydova (a), R. de Kruif (a), D. Oorschota (a), M. Dusa (b), C. Wagner (a), J. Jiang (c), W. Liu (c), H. Kang (c), H.-yu Liu (c), P, Spies (d), N. Wiese (d), M. Waiblinger (d)
(a) ASML Netherlands B.V., Veldhoven, The Netherlands
(b) ASML Belgium bvba., Leuven, Belgium
(c) Brion Technologies Incorporated, Santa Clara, CA, USA
(d) Carl Zeiss SMS GmbH, Jena, Germany
17:50 Farewell
18:00 End of Conference