Tuesday, October 16, 2012
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08:20 - Opening Remarks |
08 :30 |
Plenary 2: Disruptive Planar & 3D Solutions for Energy Efficiency |
Laurent Malier, CEA-LETI Minatec, Grenoble, France |
Session D - 3D, TSV & MEMS (1) Chairs: Xinchu Lu and Akira Isobe
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09:00 |
CMP Process Optimization for Bonding Applications |
Viorel Balan (1); Aurelien Seignard (1); Daniel Scevola (2); Jean-François Lugand (2); Lea Di Cioccio ((1) CEA-DRT/LETI); Maurice Rivoire ((2) STMicroelectronics) |
09:20 |
Process Optimization of Grinding and CMP for Thinning of Si |
Paul Feeney (Axus Technology) |
09:40 |
Influence of different anneal processes on copper surfaces pre- and post-CMP |
Dobritz; Juergen Grafe; Holger Wachsmuth; Irene Bartusseck; Juergen Wolf (Fraunhofer Institute) |
10:00 |
TSV CMP Process Development and Pitting Defect Reduction |
Xu Jinhai (Semiconductor Manufacturing International Corporation & SMIC) |
10:20 - Coffee Break, Posters and Exhibition
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10:50 |
Advances in CMP for TSV Reveal |
Robert L. Rhoades (Entrepix, Inc); Dean Malta (RTI, Inc., USA) |
11:10 |
Application of an Abrasive-Free Cu Slurry for MEMS Devices |
Benjamin Steible; Michael Stoldt; Michael Tack; Gerfried Zwicker (Fraunhofer ISIT) |
Session E - Consumables Metrology Chairs: Syushei Kurokawa and Hitoshi Morinaga
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Invited 3
11:30 |
Relationship between Spatial Wavelength Pad Surface Profile and Pattern Step-height Reduction with 28nm Ceria Particle Slurry (Invited) |
Jinok Moon (Samsung Electronics. Co., Ltd. & Hanyang University); Jae-Young Bae (2); Kwang-Ho Oh (2); Ungyu Paik((2) WCU Department of Energy Engineering) |
12:00 |
Challenges of CMP consumables metrology |
Alex Tregub (Intel Corporation)
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12:20 |
Identification of nonlinear viscoelasticity of polishing pad using an onmachine compression tester |
Norikazu Suzuki; Masakazu Asaba; Yohei Hashimoto; Eiji Shamoto (Nagoya University) |
12:40 - Lunch, Posters and Exhibition
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Session F - Fundamentals (1) Chairs: Jin-Goo Park and Youngsik Moon
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Invited 4 14:00 |
Additive/Abrasive Interactions in Solution: Investigation of the Surface Chemistry and Adsorption Behavior of CMP Abrasives (Invited) |
Mansour Moinpour (INTEL Corp.); Edward Remsen; Ashley England (Bradley University); Ashwani Rawat (Intel Corp.) |
14:30 |
Experimental Studies on Interfacial Fluid Lubrication and Wafer Status during Chemical Mechanical Polishing of 12-inch Wafer |
Dewen Zhao; Tongqing Wang; Yongyong He;
Xinchun Lu (Tsinghua University) |
14:50 |
Effect of Slurry Chemistry on W CMP Performance |
Mincheol Kang, Jongmin Park, Taeyeon Jung, Hyungsoon Park, Hyunghwan Kim, Hyosang Kang (SK Hynix Inc) |
Session Posters Presentation 2 Chairs: Patrick Ong and Eric Jacquinot
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15:10
P.2.1 |
Microreplicated Pad Conditioner for Copper Barrier CMP Applications |
John Zabasajja; Duy Le-huu; ChuckGould (3M Company) |
15:13
P.2.2 |
CVD Diamond-Coated CMP Polishing Pad Conditioner With Asperity Height Variation |
Joo Choi; Joo Hoon Choi1, Yong Bin Lee1, Byung Ki Kim; Shin Kyung Kim (SHINHAN DAIMOND IND.Co,Ltd) |
15:16
P.2.3 |
Chemical Mechanical Polishing Slurry for Aluminum Substrate |
Liangyong Wang (Chinese Academy of Sciences)
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15:19
P.2.4 |
Surface adsorption mechanism of water-soluble polymer in polishing slurry |
Kohsuke Tsuchiya; Shuhei Takahashi, Megumi Kubo, Hitoshi Morinaga (Fujimi Inc.) |
15:22
P.2.5 |
Oxide Rate and Selectivity as a Function of Pad Chemistry |
Peter Renteln (InnoPad Company)
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15:25
P.2.6 |
Slurry Development for Copper/Barrier CMP |
Baoguo Zhang ; Yuling Liu (Hebei University of Technology, P.R. China) |
15:28
P.2.7 |
CMP Evaluation of Reusable Polishing Pads using Auxiliary Plate |
Nicolas Daventure (Applied Materials, France); Silvio Del Monaco (1); Tatsutoshi Suzuki (Toho Engineering Co, Ltd, Japan); Viorel Balan (CEA/Leti); Maurice Rivoire ((1) STMicroelectronics) |
15:31
P.2.8 |
Role of Abrasive Type and Media Surface Energy on Nanoparticle Adsorption |
Jordan Kaiser (1); Patrick Connor (2); Patrick Levy ((2) Pall Microelectronics); Jason Keleher ((1) Lewis University, USA) |
15:34
P.2.9 |
The Synthesis of PS-inorganic Oxide Nanoparticle for CMP Slurry |
Hongyi Qin; Hojoong Kim; Hoomi Choi; Mingu Kim; Taesung Kim (Sungkyunkwan University, Korea) |
15:37
P.2.10 |
The study of POU filters performance and life-time in the CMP slurry supply system |
Sunjae Jang (1); Taesung Kim (1); Hojoong Kim ((1) Sungkyunkwan University, Korea); Donghyun Lim (2); Miyeon Nam (Woongjin Chemical, Korea); Ji Chul Yang ((2) SAMSUNG Electronics) |
15:40
P.2.11 |
Adsorption Mechanism of Benzotriazole on Copper Surface in CMP Based Slurries Containing Peroxide and Glycine |
Jing Li ; Xinchun Lu; Junyu Ou; Jie Cheng (Tsinghua University) |
15:43
P.2.12 |
The Study to Minimize the Variation of Polishing Time According to thePad Used Time |
Ji Chul Yang; Won Moon Jang (Samsung
Electronics) |
15:46
P.2.13 |
Determination of adhesion force of particles on substrate surface using atomic force microscopy |
Woonki Shin , Joonho An , Hojun Lee , Jiyoon Kim and Haedo Jeong (Pusan National University & GnP Technology) |
15:49
P.2.14 |
Investigation on Analysis and Design of Pad Conditioning Process in Double Side Polishing |
Sangjik Lee (1); Hyoungjae Kim ((1) Korea Institute of Industrial Technology, Korea); Hyunseop Lee (2) ; Haedo Jeong ((2) Pusan National University & GnP Technology) |
15:52
P.2.15 |
A Novel Evaluation Method of Polishing Slurry Flow Using Digital Image Processing - Mechanical Polishing for Sapphire using Diamond Slurry - |
Michio Uneda (1), Yuya FUKUTA ()); Kazutoshi HOTTA (3), Hiroyasu SUGIYAMA(3), Hitoshi MORINAGA ((3) Fujimi Incorporated) , Ken-ichi ISHIKAWA ((1)Kanazawa Institute of Technology) |
15:55
P.2.16 |
Research on the controlling technology of deliquescent action in polishing of KDP crystals based on deliquescent action |
Shaolong Guo (Tsinghua University, P.R. China); Feihu Zhang (1); Yong Zhang ((1) Harbin Institute of Technology, P.R. China) |
15:58
P.2.17 |
Processing Properties of Strong Oxidizing Slurry and Effect of Processing Atmosphere in SiC CMP |
Tao Yin; Toshiro Doi, Syuhei Kurokawa, Osamu Ohnishi, Tsutomu Yamazaki, Zhida Wang, and Zhe Tan (Kyushu University, Fukuoka, Japan) |
16:01
P.2.18 |
A Study on the Damaged Layer Characteristic of Initial Wafer by using Chemical-Mechanical Polishing |
ChulJin Park (1); Minhyon Jeon (Inje University, Korea); Sangjik Lee (1); Taekyung Lee (1); Hyoungjae Kim (1); Doyeon Kim ((1) Korea Institute of Industrial Technology) |
Coffee Break, Poster and Exhibition
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Session F - Fundamentals (2) Chairs: Jin-Go Park and Yongsik Moon
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Invited 5
16:55 |
Study on fine particles behavior in slurry flow between wafer and polishing pad as a material removal process in CMP (Invited) |
Keiichi Kimura; Keisuke Suzuki, Panart Khajornrungruang, (Kyushu Institute of Technology); Yoshikazu Idei (Ebara Corp.) |
17:25 |
Slurry Particle Agglomeration Experimentation & Modeling for Chemical Mechanical Planarization (CMP) |
Joy Johnson, D. Boning (Massachusetts Institute of Technology), G. S. Kim, K. Knutson, P.Safier Intel Corporation |
17:45 |
Tribological, Thermal, and Kinetic Attributes of 300 vs. 450 mm Chemical Mechanical Planarization Processes |
Yubo Jiao (1); Xiaoyan Liao (1); Changhong Wu (1); Yun Zhuang (2); Siannie Theng (2); Yasa; Sampurno ((2) Araca, Inc., USA); Michael Michael Goldstein (Intel Corp.); Ara Philipossian ((1) University of Arizona) |
18:30 - Wine, Cheese & Cooking Meat Tasting
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