13:15 – 14:00 on Tuesday, June 21st and Wednesday, June 22nd, 2016 |
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Wafer Litho
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SRAF insertion for VIA-like layers using laSRAF method A. Lutich, Globalfoundries, Dresden, Germany
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EUV Lithography |
Contrast: EUV Lithography E. Psara, J. Lubkoll, F. Wittebrood, E. van Setten, J. Finders, S. Wuister, T. Last, G. Rispens, D. Oorschot, ASML Netherlands B.V., Veldhoven, The Netherlands |
Researching new EUV pellicle films for source powers beyond 250 watts M. Nasalevich, P. J. van Zwol, E. Abegg, P. Voorthuijzen, D. Vles, M. Péter, W. van der Zande, H. Vermeulen, ASML Netherlands B.V., Veldhoven, The Netherlands |
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Nano-Imprint Lithography |
NIL Industrial Platform assessment within INSPIRE project H. Teyssedre, S. Landis, S. Bos, L. Pain, CEA-LETI, Grenoble, France; V. Schauer, M. Laure, W. Zorbach, C. Thanner, G. Mittendorfer, M. Eibelhuber, M. Wimplinger, EV Group E.Thallner GmbH, St. Florian am Inn, Austria |
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Modeling and Computional Process Correction |
Bayesian Analysis for OPC Modeling A. Burbine, G. Fenger, J. Sturtevant, D. Fryer, Mentor Graphics Corporation, Wilsonville, OR, USA |
Simulation flow and layout printability for laser direct write lithography T. Onanuga, Fraunhofer IISB & Friedrich-Alexander University, Erlangen-Nuremberg, Germany; A. Erdmann, Fraunhofer IISB, Erlangen, Germany |
Evaluation of photomask shape uncertainties on level-set-based inverse lithography with a rigorous mask model X. Wu1, 2, A. Erdmann2, T. Fuehner2, E. Y. Lam1 1 The University of Hong Kong, Pokfulam, Hong Kong 2 Fraunhofer IISB, Erlangen, Germany |
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Using the Data, More than Moore, IoT & Manufacturing Challenges |
A study of SU-8 photoresist in deep trenches for silicon-embedded microinductors E. Laforge, C. Rabot, N. Wang, Z. Pavlovic, P. McCloskey, C. Ó Mathúna, Tyndall National Institute, Ireland |
Industrial implementation of spatial variability control by real time SPC O. Roule, F. Pasqualini, M. Borde, STMicroelectronics, Crolles, France |
Combination of Direct Laser Writing and PDMS molds for nano- and microfabrication |
M. Rumler 1, 2, 3, L. Baier4, F. Michel4, M. Becker5, M. Foerthner1, 3 , M. Rommel4 1 Electron Devices (LEB), University of Erlangen-Nuremberg, Germany 2 Cluster of Excellence Engineering of Advanced Materials (EAM), Erlangen, Germany 3 Graduate School in Advanced Optical Technologies (SAOT), Erlangen, Germany 4 Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, Germany 5 NanoWorld Services GmbH, Erlangen, Germany |
CD process control through machine learning C. Utzny, AMTC, Dresden, Germany |