International Executive Committee
China
Xinchun Lu, Tsinghua University
Xinping Qu, Fudan University
Europe
Gerfried Zwicker, Fraunhofer ISIT
Viorel Balan, CEA-LETI, France
Korea
Jin-Goo Park, Hanyang University
Haedo Jeong, Pusan National University
Taiwan
Chris Chern, TSMC
Willie Pai, Kinik Company
United States
Paul Feeney, Independent consultant
Robert Rhoades, Entrepix
Japan
Yukiteru Matsui, Toshiba Memory Corporation, Japan
Syuhei Kurokawa, Kyushu University
International Program Committee
China
Shumin Wang, Anji Microelectronics
Baoguo Zhang, Hebei University of Technology
Weili Liu, Shanghai Xinanna Electronic Technology
Kun Li, Tianjin Hwatsing Technology
Europe
Knut Gottfried, Fraunhofer ENAS, Germany
Eric Jacquinot, Merck Performance Materials, France
Patrick Ong, IMEC, Belgium
Cedric Perrot, STMicroelectronics, Crolles, France
Japan
Michio Uneda, Kanazawa Institute of Technology
Kazumi Sugai, Fujimi Inc.
Norikazu Suzuki, Nagoya University
Yasuhisa Sano, Osaka University
Korea
Tae-Sung Kim, Sungkyunkwan University
Eung-Rim Hwang, SK Hynix Semiconductor
Bo Un Yoon, Samsung Electronics
Yongsun Ko, Samsung Electronics
Taiwan
KC Wu, Cabot Microelectronics
Tengchun Tsai, TSMC
Daniel Fang, National Taiwan University of Science and Technology
Jerry Hsu, National Taiwan University of Science and Technology
United States
S.V. Babu, Clarkson University
Mahadevaiyer Krishnan, IBM
Don Frye, Entegris
Andrew Carswell, Micron
Local Organizing Committee
Viorel Balan, CEA-LETI, Grenoble, France
Knut Gottfried, Fraunhofer Institute for Electronic Nano Systems ENAS, Chemnitz, Germany
Eric Jacquinot, Merck Performance Materials, Trosly-Breuil, France
Patrick Ong, IMEC, Leuven, Belgium
Cedric Perrot, STMicroelectronics, Crolles, France
Ronald Schnabel, VDE/VDI-GMM, Frankfurt am Main, Germany
Gerfried Zwicker, Fraunhofer Institute for Silicon Technology ISIT, Itzehoe, Germany