Reinhold Bayerer
Physics of Power Electronics, 64385 Reichelsheim
Ingrid Bollens
ECPE e.V., ,
Dushan Boroyevich
Virginia Tech Center for Power Electronics Systems, 24061-0179 Blacksburg, US
Giovanni Busatto
University of Cassino and Lazio Meridionale, 03043 Cassino, IT
Jaeho Choi
Chungbuk National University, 361-763 Cheongju, Chungbuk, KR
Rik De Doncker
RWTH Aachen, 52074 Aachen
Enrique J. Dede
University of Valencia, Valencia, ES
Braham Ferreira
Delft University of Technology, 2628 CD Delft, NL
Kimimori Hamada
PDPlus LLC, 471-0066 Toyata, Aichi, JP
Reinhard Herzer
Semikron Elektronik GmbH & Co. KG, 90431 Nürnberg
Mark Johnson
University of Nottingham, NG7 2RD Nottingham, GB
Wlodzimierz Koczara
Warsaw University of Technology, 00-661 Warsaw, PL
Johann Walter Kolar
Eidgenössische Technische Hochschule Zürich, 8092 Zürich, CH
Leo Lorenz
ECPE European Center for Power Electronics e.V., 90443 Nürnberg
Michel Mermet-Guyennet
Supergrid Institute SAS, 69611 Villeurbanne CEDEX, FR
Hiromichi Ohashi
NPERC-J, 305-8568 Tsukuba, Ibaraki, JP
Cian O'Mathuna
Tyndall National Institute, Cork, IE
Ichiro Omura
Kyushu Institute of Technology, 804-8550 Kitakyushu, JP
Mats Reimark
Fairchild Semiconductor, 16440 Kista, SE
Jean-Luc Schanen
G2ELab, 38031 Grenoble, FR
Jürgen Schuderer
ABB Schweiz AG, 5405 Baden-Dättwil, CH
Emanuele Scrofani
STMicroelectronics, Catania, IT
Hans Dieter Silber
Universität Bremen, Bremen
Eckhard Wolfgang
ECPE e.V., 81379 München
Mark Dehong Xu
Zhejiang University, 310027 Hangzhou, CN
Stefan Zudrell-Koch
HTL Rankweil, Rankweil, AT