Oral Presentations Wednesday 

ESREF 2014 


------ Failure Analysis ------

Signal noise perturbation on automotive mixed-mode semiconductor device generated by graded substrate defect
Yann Weber1, Linda Buffo1, Béatrice Vanhuffel1, Nicholas Lee1, Neal Stirlen2, Jeff Chen2, Xiang-Dong Wang2
1 Freescale Semiconduteurs, France; 2 Freescale Semiconduteurs, United States

Quantitative Scanning Microwave Microscopy: A calibration flow
Thomas Schweinboeck, Soeren Hommel
Infineon, Germany

Electro Optical Therahertz Pulse Reflectometry, a non destructive technique to localize defects on various type of package
Antoine Reverdy1, Maxime Marchetti2, Alessandra Fudoli3, Vincent Goubier2, Morgan Cason3
1 Sector Technologies, France; 2 ST Microelectronis, France; 3 ST Microelectronis, Italy

Exact 3D Simulation of Scanning Electron Microscopy Images of Semiconductor Devices in the Presence of Electric and Magnetic Fields
Mauro Ciappa1, Alexey Yu. Illarionov2, Emre Ilguensatiroglu1
1 ETH Zurich, Switzerland; 2 Integrated Systems Laboratory, ETH, Switzerland

A comprehensive study of the application of the EOP techniques on bipolar devices
Mehdi Mohamed Rebaï1, Frédéric Darracq2, Philippe Perdu3, Jean-Paul Guillet2
1 IMS Laboratory & CNES, France; 2 IMS Laboratory, France; 3 CNES, France

Enabling Higher Fault Isolation Resolution through Advanced Optics
Derryck T. Reid
Heriot-Watt University, United Kingdom

Magnetic Field Imaging for non destructive 3D IC testing
Jan Gaudestad, Antonio Orozco
Neocera, United States

Pattern image enhancement by extended depth of field
Samuel Chef1, Bastien Billiot2, Sabir Jacquir2, Kevin Sanchez3, Philippe Perdu3, Stéphane Binczak2
1 University of Burgundy & CNES, France; 2 University of Burgundy, France; 3 CNES, France

Backside spectroscopic photon emission microscopy using intensified silicon CCD
Arkadiusz Glowacki1, Christian Boit1, Philippe Perdu2, Yoshitaka Iwaki3
1 Technische Universität Berlin, Germany; 2 CNES, France; 3 Hamamatsu Photonics, Germany

Fretting corrosion: analysis of the failure mechanism for low voltage drives applications
Elena Mengotti1, Liliana Duarte1, Juha Pippola2, Laura Frisk2
1 ABB, Switzerland; 2 Tampere University of Technology, Finland

------ Power Devices Reliability ------

Impact of gate drive voltage on avalanche robustness of trench IGBTs
Michele Riccio1, Luca Maresca1, Andrea Irace1, Giovanni Breglio1, Yohei Iwahashi2
1 Università di Napoli Federico II, Italy; 2 Toyota Motor Corporation, Japan

Thermal-aware design and fault analysis of a DC/DC parallel resonant converter
Giuseppe De Falco, Michele Riccio, Giovanni Breglio, Andrea Irace
DIETI - Università di Napoli Federico II, Italy

Comparison of Temperature Limits for Trench Silicon IGBT Technologies for Medium Power Applications
Xavier Perpiñà1, Xavier Jordà1, Javier León2, Miquel Vellvehi2, Daniel Antón3, Sergio Llorente3
1 IMB-CNM, Spain; 2 CNM, Spain; 3 BSH, Spain

3-D electrothermal simulation of active cycling on smart power MOSFETs during Short-Circuit and UIS conditions
Michele Riccio1, Vincenzo D’alessandro1, Andrea Irace1, Gilles Rostaing2, Mounira Berkani2, Stéphane Lefebvre2, Philippe Dupuy3
1 University Federico II, Italy; 2 SATIE, CNAM, CNRS, ENS Cachan, France; 3 FREESCALE, France

Performance drifts of N-MOSFETs under pulsed RF life test
Mohamed Gares
ISIM, University of Gabes, Tunisia

Lifetime Modeling and Simulation of Power Modules for Hybrid Electrical / Electrical Vehicles
Markus Thoben
Infineon, Germany

Study of Thermal Cycling and Temperature Aging on PbSnAg Die Attach Solder Joints for High Power Modules
Franc Dugal1, Mauro Ciappa2
1 ABB, Switzerland; 2 ETH Zurich, Switzerland

Improving the FE Simulation of Molded Packages Using Warpage Measurements
Saskia Huber1, Marius van Dijk2
1 Fraunhofer, Germany; 2 Fraunhofer IZM, Germany

Reliability of Cu nanoparticle joint for high temperature power electronics
Toshitaka Ishizaki1, Yasushi Yamada2, Toshikazu Satoh1
1 Toyota Central R&D Labs., Inc., Japan; 2 Daido Univeristy, Japan

Dielectric Strength and Thermal Performance of PCB-Embedded Power Electronics
Wolfgang Wondrack1, Richard Randoll1, Andreas Schletz2
1 Daimler, Germany; 2 Fraunhofer IISB, Germany

------ Chip-Package Interactions and 3D Reliability & Failure Mechanisms ------

Reliability Challenges for Barrier/Liner System in High Aspect Ratio Through Silicon Vias
Yunlong Li, Stefaan Van Huylenbroeck, Els Van Besien, Xiaoping Shi, Chen Wu, Michele Stucchi, Gerald Beyer, Eric Beyne, Ingrid De Wolf, Kristof Croes
IMEC, Belgium

Submicron XCT for failure analysis in advanced packaging
Markus Löffler1, S. Niese1, J. Wolf2, Ehrenfried Zschech3
1 TU Dresden, Germany; 2 Fraunhofer IZM-ASSID, Germany; 3 TU Dresden and Fraunhofer IKTS-MD, Germany

The effects of etching and deposition on the performance and stress evolution of open through silicon vias
Lado Filipovic, Siegfried Selberherr
Technische Universität Wien, Austria

Advanced methods for mechanical and structural characterization of nanoscale materials for 3D IC integration
Christoph Sander, André Clausner, Martin Gall
Fraunhofer IKTS-MD, Germany

Stress Analyses of High Spatial Resolution on TSV and BEoL Structures
Dietmar Vogel1, Ellen Auerswald1, Juergen Auersperg1, Parisa Bayat2, Raul Rodriguez2, Dietrich Zahn2, Sven Rzepka1, Bernd Michel1
1 Fraunhofer ENAS, Germany; 2 Technical University Chemnitz, Germany

------ Reliability & Failure Mechanisms in Packages and Assembly ------

Reliability of Wafer Level Chip Scale Packages
René Rongen
NXP Semiconductors, Nijmegen, Netherlands

High temperature degradation of palladium coated copper bond wires
Jörg Krinke, Dragica Dragicevic, Susann Leinert, Erik Frieß, Joachim Glück
Robert Bosch GmbH, Germany

Interface microstructure effects in Au thermosonic ball bonding contacts by high reliability wire materials
Benjamin März1, Andreas Graff1, Robert Klengel1, Matthias Petzold2
1 Fraunhofer Institute for Mechanics of Materials Halle, Germany; 2 Fraunhofer IWM Halle, Germany

Reliability of thick Al wire: A study of the effects of wire bonding parameters on thermal cycling degradation rate using non-destructive methodologies
Elaheh Arjmand, Pearl Agyakwa, C. Mark Johnson
University of Nottingham, United Kingdom

Qualification procedure against moisture for embedded capacitors
Helene Fremont1, Jörg Kludt2, Massar Wade1, Kirsten Weide-Zaage2, Isabelle Bord-Majek1, Geneviève Duchamp1
1 IMS-Bordeaux Université de Bordeaux, France; 2 LFI Gottfried Wilhelm Leibniz Universität Hannover, Germany

High Temperature Reliability of Electrically Conductive Adhesive Attached Temperature Sensors on Flexible Polyimide Substrates
Sanna Lahokallio, Janne Kiilunen, Laura Frisk
Tampere University of Technology, Finland

A Study on Electrochemical effects in external Capacitor Packages
Harald Preu, Jochen Feilmeier, Markus Lang, Norbert Soellner, Jürgen Walter, Walter Mack
Infineon Technologies AG, Germany

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