Oral Presentations Thursday 

ESREF 2014 


------ Power Devices Reliability ------

The Influence of Liners with Ti, Ta or Ru Finish on Thin Cu Films
David Gross1, Sabine Haag1, Martin Schneider-Ramelow2, Klaus-Dieter Lang2
1 Robert Bosch GmbH, Germany; 2 Fraunhofer IZM, Germany

HCS Degradation of 5nm Oxide High-Voltage PLDMOS
Christina Olk, Stefano Aresu, Ralf Rudolf, Michael Röhner, Wolfgang Gustin
Infineon, Germany

Risk and reliability assessment about a manufacturing issue in a power MOSFET for automotive applications
Corinne Bergès, Pierre Soufflet, Abdeslam Jadrani
Freescale, France

Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: part II
Junpei Takaishi1, Syohei Harada1, Masanori Tsukuda2, Ichiro Omura1
1 Kyushu Institute of Technology, Japan; 2 ICSEAD, Japan

Short-circuit protection for an IGBT with detecting the gate voltage and gate charge
Kazunori Hasegawa1, Hidetaro Yoshida1, Kota Hamada1, Masanori Tsukuda2, Ichiro Omura1, Kenichi Yamamoto1
1 Kyushu Institute of Technology, Japan; 2 The International Centre for the Study of East Asian Development, Japan

------ Reliability & Failure Mechanisms in Si-Technology and Nanoelectronics ------

Performance and Reliability Trade-Offs for High-K RRAM
Nagarajan Raghavan
Singapore University of Technology and Design, Singapore

Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations
Baojun Tang1, Weidong Zhang2, Laurent Breuil1, Colin Robinson2, Yunqi Wang3, Maria Toledano-Luque1, Geert Van den Bosch1, Jianfu Zhang2, Jan Van Houdt1
1 IMEC, Belgium; 2 Liverpool John Moores University, United Kingdom; 3 University of Oxford, United Kingdom

Impact of endurance degradation on the programming efficiency and the energy consumption of NOR Flash memories
Vincenzo Della Marca, Jeremy Postel-Pellerin, Guillaume Just, Pierre Canet, Jean-Luc Ogier
Aix-Marseille University, France

Variability Model for Forming Process in Oxygen Vacancy Modulated High-κ based Resistive Switching Memory Devices
Nagarajan Raghavan1, Michel Bosman2, Daniel Frey3, Kin Leong Pey1
1 Singapore University of Technology and Design, Singapore; 2 A*STAR Institute of Materials Research and Engineering, Singapore; 3 Massachusetts Institute of Technology, United States

Novel 3D back-to-back diodes ESD protection
Bertrand Courivaud1, Nicolas Nolhier1, Gilles Ferru2, Marise Bafleur1, Fabrice Caignet1
1 LAAS-CNRS, France; 2 IPDIA, France

Particle Monte Carlo Modeling of Single-Event Transient Current and Charge Collection in Integrated Circuits
Jean-Luc Autran1, Maximilien Glorieux2, Daniela Munteanu3, Sylvain Clerc2, Gilles Gasiot2, Philippe Roche2
1 Aix-Marseille University, France; 2 STMicroelectronics, France; 3 CNRS, France

Radiation Sensitivity of Junctionless Double-Gate 6T SRAM Cells Investigated by 3-D Numerical Simulation
Daniela Munteanu1, Jean-Luc Autran2
1 CNRS-IM2NP, France; 2 Aix-Marseille University, France

Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS
Jean-Max Dutertre1, Rodrigo Possamai Bastos2, Olivier Potin3, Marie-Lise Flottes3, Bruno Rouzeyre3, Giorgio Di Natale3, Alexandre Sarafianos4
1 Ecole des Mines de Saint-Etienne, France; 2 TIMA Lab , France; 3 LIRMM. Univ. Montpellier, France; 4 STMicroelectronics, France

Assessment of Read Disturb Immunity in Conducting Bridge Memory Devices – A Thermodynamic Perspective
Nagarajan Raghavan1, Michel Bosman2, Kin Leong Pey1
1 Singapore University of Technology and Design, Singapore; 2 A*STAR Institute of Materials Research and Engineering, Singapore

Comparative Soft Error Evaluation of Logic Cells in FinFET Technology
Laurent Artola1, Guillaume Hubert1, Massimo Alioto2
1 ONERA - The French Aerospace Lab, France; 2 National University of Singapore, Singapore

A Quantitative Study of Phosphorus Implantation Damage on the thick Gate Oxide of the 28nm Node
Xinggong Wan1, Sandhya Chandrashekhar1, Boris Bayha2, Martin Trentzsch2, Torben Balzer2, Mahesh Siddabathula2, Oliver Aubel2

Mixture of Negative Bias Temperature Instability and Hot-Carrier driven Threshold Voltage Degradation of 130nm technology p-channel Transistors
Gunnar Andreas Rott1, Karina Rott1, Hans Reisinger1, Wolfgang Gustin1, Tibor Grasser2
1 Infineon Technologies AG, Germany; 2 Institute for Microelectronics, Technische Universität Wien, Austria

Predictive evaluation of electrical characteristics of sub-22nm FinFET technologies under device geometry variations
Cristina Meinhardt, Alexandra Lackmann Zimpeck, Ricardo Reis
UFRGS, Brazil

------ Reliability & Failure Mechanisms of Wide Bandgap Devices ------

Single Pulse Avalanche Robustness and Repetitive Stress Ageing of SiC power MOSFETs
Asad Fayyaz1, Li Yang1, Michele Riccio2, Alberto Castellazzi1, Andrea Irace2
1 University of Nottingham, United Kingdom; 2 University of Naples Federico II, Italy

Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors
Sergey Shevchenko, Matthias Schulz, Eldad Bahat-Treidel, Wilfred John, Stephan Freyer, Paul Kurpas, Hans-Joachim Würfl
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), Germany

Physical Origin of Current Collapse in Au-free AlGaN/GaN Schottky Barrier Diode
Jie Hu, Steve Stoffels, Silvia Lenci, Nicolò Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere
IMEC, Belgium

Thermal damage in SiC Schottky diodes induced by SE heavy ions
Carmine Abbate1, Giovanni Busatto1, Paolo Cova2, Nicola Delmonte2, Francesco Giuliani2, Francesco Iannuzzo3, Annunziata Sanseverino3, Francesco Velardi3
1 DIEI - University of Cassino and Southern Lazio, Italy; 2 DII - University of Parma, Italy; 3 DIEI - University of Cassino and Souther Lazio, Italy

Temperature effects on the ruggedness of SiC Schottky Diodes under surge current
Javier León1, Xavier Perpiñà1, Viorel Banu1, Josep Montserrat1, Maxime Berthou2, Miquel Vellvehi1, Philippe Godignon1, Xavier Jordà1
1 IMB-CNM (CSIC), Spain; 2 Insa-Lyon, France

Proton induced trapping effect on space compatible GaN HEMTs
Antonio Stocco1, Simone Gerardin1, Davide Bisi1, Stefano Dalcanale1, Fabiana Rampazzo1, Matteo Meneghini1, Gaudenzio Meneghesso1, Jan Grünenpütt2, Benoit Lambert3, Hervé Blanck2, Enrico Zanoni4
1 University of Padova, Italy; 2 United Monolithic Semiconductors, Germany; 3 United Monolithic Semiconductors, France; 4 DEI-UNIPD, Italy

Analysis of an ESD failure mechanism on a SiC MESFET
Tanguy Phulpin1, Karine Isoird1, David Tremouilles1, Dominique Tournier2, Philippe Godignon3
1 LAAS-CNRS, France; 2 ampere-lab, France; 3 CNM, Spain

Traps localization and analysis in GaN HEMTs
Alessandro Chini1, Fabio Soci1, Gaudenzio Meneghesso2, Matteo Meneghini2, Enrico Zanoni2
1 University of Modena and Reggio Emilia, Italy; 2 University of Padova, Italy

Degradation analysis and current collapse imaging in AlGaN/GaN HEMT by electric field induced optical second harmonic generation measurement
Takashi Katsuno1, Takaaki Manaka2, Tsuyosihi Ishikawa1, Hiroyuki Ueda1, Tsutomu Uesugi1, Mitsumasa Iwamoto2
1 Toyota Central R&D Labs., Inc., Japan; 2 Tokyo Institute of Technology, Japan

------ Reliability & Failure Mechanisms of Photonic and Special Devices ------

MEMS Reliability – Current Status and Challenges
Mervi Paulasto-Kröckel, Jue Li
University Aalto, Finland

ESD on GaN-based LEDs: an analysis based on dynamic electroluminescence measurements and current waveforms
Matteo Dal Lago1, Matteo Meneghini1, Nicola Trivellin2, Gaudenzio Meneghesso1, Enrico Zanoni1, Marco Barbato1, Carlo De Santi1
1 University of Padova, Italy; 2 LightCube SRL, Italy

Temperature dependent optoelectronic properties of a non-intentionally created cleaved-coupled-cavity laser
Heinz-Christoph Neitzert1, Giovanni Landi2
1 Salerno University, Italy; 2 Fernuniversitaet Hagen, Germany

Thermally-activated degradation of InGaN-based laser diodes: effect on threshold current and forward voltage
Carlo De Santi1, Matteo Meneghini2, Michael Marioli2, Matteo Buffolo2, Nicola Trivellin3, T. Weig4, K. Holc4, K. Kohler4, J. Wagner4, U. T. Schwarz4, Gaudenzio Meneghesso2, Enrico Zanoni2
1 Università degli Studi di Padova - Department of Information Engineering, Italy; 2 University of Padova, Italy; 3 LightCube SRL, Italy; 4 Fraunhofer Institute for Applied Solid State Physics IAF, Germany

FIB-induced electro-optical alterations in a DFB InP laser diode
Giovanna Mura, Massimo Vanzi, Giulia Marcello
DIEE University of Cagliari - Italy, Italy

UV LEDs reliability tests for fluoro-sensing sensor application
F. Jose Arques-Orobon1, Neftali Nuñez2, Manuel Vazquez2, Vicente González-Posadas1
1 Technical University of Madrid, Spain; 2 Instituto de Energía Solar-Technical University of Madrid, Spain

A study of deposition conditions on charging properties of PECVD silicon nitride films for MEMS capacitive switches
Matroni Koutsoureli, Loukas Michalas, Anestis Gantis, George Papaioannou
University of Athens, Greece

Automated defect analysis in solar cells using EBIC
Grigore Moldovan1, Shark Lotharukpong2, Peter Wilshaw2
1 Oxford Instruments NanoAnalysis, United Kingdom; 2 University of Oxford, United Kingdom

Conduction Instability of Amorphous InGaZnO Thin-Film Transistors under Constant Drain Current Stress
Jung Han Kang, Edward Namkyu Cho, Ilgu Yun
Yonsei University, Korea

Impressum | © 2010 VDE Verband der Elektrotechnik Elektronik Informationstechnik e.V.