Invited Talks 

ESREF 2016 


Invited Talks

Reliability Management – the central Enabler for Advanced Technologies in Automotive
Andreas Aal, VW (GER)

Mobility is in a transition phase from individual human controlled to assisted and autonomous driving. Also, new roles add to car manufacturers being now forced to adapt to digital service providers as cars become the ultimate mobile office. Today, functional automotive requirements start to exceed on what’s on the market accompanied with huge reliability assurance process gaps along the supply chain. Standards are out dated, research data unavailable and activities to change this strongly bound to market dynamics and mass volume requirements. This is why reliability engineering and management becomes a leading role in product design and business model formation. Transparency about technological gaps and how they are being handled determine market positions. To create industry awareness, we demonstrate two examples out of an OEM driven study on mechanical induced parametric deviations which relate to corresponding product verification/validation issues that can end up in real, but which are mostly classified as no fault found (NFF) issues.

Device to circuit reliability correlations for Metal Gate / High-k transistors in scaled CMOS technologies
Andreas Kerber, Globalfoundries Inc. (USA)

Metal Gate / High-k stacks are in CMOS manufacturing since the 45nm technology node. To meet technology performance and yield targets gate stack reliability is constantly being challenged. Assessing the associated reliability risk for CMOS products relies on a solid understanding of device to circuit reliability correlations. In this paper we summarize our findings on the correlation between device reliability and circuit degradation

Laser Voltage Probing – its value and the race against scaling
Dr. Ulrike Ganesh, Qualcomm Technologies, Inc. (USA)

After providing a brief introduction to Laser Voltage Probing (LVP), along with useful information and further reading suggestions, this paper provides a deep dive into current benefits and challenges of LVP applied to 16/14 nm FinFET technology and discusses the issues that arise from scaling of technology nodes according to the International Technology Roadmap for Semiconductors.

Reliability aspects of copper metallization and interconnect technology for power devices
Frank Hille et all, Infineon (GER)

The introduction of thick copper metallization and topside interconnects as well as a superior die attach technology is improving the performance and reliability of IGBT power transistor technologies significantly. The much higher specific heat capacity and higher thermal conductivity increases the short circuit capability of IGBTs, which is especially important for inverters for drives applications. This opens the potential to further optimize the electrical performance of IGBTs for higher energy efficiency.
The change in metallization requires the introduction of a reliable barrier against copper diffusion and copper silicide formation. This leads to the development of an efficient test method and reliability assessment according to a robustness validation approach.
In addition, the new metallization enables interconnects with copper bond wires, which yield, together with an improved die attach technology, major improvement in the power cycling capability.
All these aspects are discussed in detail.

GaN reliability: real important criteria, required progress and supporting physics to obtain market approval for  system with GaN
Toshihide Kikkawa, Transphorm (USA)


LED Degradation: From component to system
B. Hamon / W.D. van Driel, Philips Lighting (F, NLD)

Human civilization revolves around artificial light. Since its earliest incarnation as firelight to its most recent as electric light, artificial light is at the core of our existence. It has freed us from the temporal and spatial constraints of daylight by allowing us to function equally well night and day, indoors and outdoors. It evolved from open fire, candles, carbon arc lamp, incandescent lamp, fluorescent lamp to what is now on our door step: solid state lighting (SSL). SSL refers to a type of lighting that uses semiconductor light-emitting diodes (LEDs), organic or polymer light-emitting diodes (OLED / PLED) as sources of illumination rather than electrical filaments, plasma (used in arc lamps such as fluorescent lamps), or gas. SSL applications are now at the doorstep of massive market entry into our offices and homes. This penetration is mainly due to the promise of an increased reliability with an energy saving opportunity: a low cost reliable solution. An SSL system is composed of a LED engine with a micro-electronics driver(s), integrated in a housing that also provides the optical, sensing and other functions. Knowledge of (system) reliability is crucial for not only the business success of the future SSL applications, but also solving many associated scientific challenges. In practice, a malfunction of the system might be induced by the failure and/or degradation of the subsystems/interfaces. This paper will address the items to ensure high reliability of SSL systems by describing LED degradation from a component and a system perspective.

Application of high frequency scanning acoustic microscopy
 for the failure analysis and reliability assessment of MEMS sensors
Dr. Stefan Oberhoff, Expert Analytics Robert Bosch GmbH (GER)

We successfully applied high frequency scanning acoustic microscopy (SAM) as a tool for the analysis of MEMS sensors. Using state of the art transducers with frequencies up to 300 MHz, we evaluated the achievable resolution and performed case studies: we localized a contamination-induced delamination on the ASIC surface and studied failure modes after mechanical stability tests, showing that a combination of SAM and infrared microscopical evaluation provides information about the course of cracks on a micrometer length scale.



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Fraunhofer IWMS
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Orsay Pysics, Coffe Break Sponsor of EFUG Session at ESREF 2016
City of Halle, Sponsor of ESREF 2016
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